Theory of Impurity Band Conduction in Semiconductors
نویسندگان
چکیده
منابع مشابه
Anderson impurity in a correlated conduction band
We investigate the physics of a magnetic impurity with spin 1/2 in a correlated metallic host. Describing the band by a Hubbard Hamiltonian, the problem is analyzed using dynamical mean-field theory in combination with Wilson's nonperturbative numerical renormalization group. We present results for the single-particle density of states and the dynamical spin susceptibility at zero temperature. ...
متن کاملImpurity band conduction in a high temperature ferromagnetic semiconductor.
The band structure of a prototypical dilute magnetic semiconductor (DMS), Ga1-xMnxAs, is studied across the phase diagram via infrared and optical spectroscopy. We prove that the Fermi energy (EF) resides in a Mn-induced impurity band (IB). Specifically the changes in the frequency dependent optical conductivity [sigma1(omega)] with carrier density are only consistent with EF lying in an IB. Fu...
متن کاملScreening of Impurity Pseudopotentials in Polar Semiconductors
für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...
متن کاملCrossover from impurity to valence band in diluted magnetic semiconductors: Role of Coulomb attraction by acceptors
F. Popescu,1,* C. Şen,1,2 E. Dagotto,3,4 and A. Moreo3,4 1Department of Physics, Florida State University, Tallahassee, Florida 32306, USA 2National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA 3Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA 4Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Ten...
متن کاملConduction anisotropy in layered semiconductors.
We present a simple theoretical model for the diffusion of free carriers in layered semiconducting compounds, for which a small concentration of dopants (guest layers) disturb the system conductance, resulting in a strong anisotropy across and along the layers, which depends on the temperature of the system, as well as on the barrier lowering caused by the applied voltage. This model is based o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Progress of Theoretical Physics
سال: 1961
ISSN: 0033-068X
DOI: 10.1143/ptp.26.739